bc 807w, bc 808w oct-21-1999 1 pnp silicon af transistors for general af applications high collector current high current gain low collector-emitter saturation voltage complementary types: bc 817w, bc 818w (npn) 1 3 vso05561 2 type marking pin configuration package sot-323 sot-323 sot-323 sot-323 sot-323 sot-323 bc 807-16w bc 807-25w bc 807-40w bc 808-16w bc 808-25w bc 808-40w 5as 5bs 5cs 5es 5fs 5gs 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c maximum ratings parameter symbol unit bc 808w bc 807w 45 collector-emitter voltage 25 v ceo v collector-base voltage v cbo 50 30 emitter-base voltage v ebo 5 5 dc collector current i c 500 ma peak collector current i cm a 1 base current ma 100 i b 200 i bm peak base current total power dissipation , t s = 130 c mw 250 p tot 150 t j junction temperature c storage temperature t st g -65 ... 150 thermal resistance junction ambient 1) r thja k/w 215 junction - soldering point r thjs 80 1) package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 cu
bc 807w, bc 808w oct-21-1999 2 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics v bc 807w bc 808w 45 25 v (br)ceo collector-emitter breakdown voltage i c = 10 ma, i b = 0 - - - - - - bc 807w bc 808w collector-base breakdown voltage i c = 10 a, i b = 0 50 30 - - v (br)cbo - - emitter-base breakdown voltage i e = 10 a, i c = 0 v (br)ebo 5 - 100 - na i cbo collector cutoff current v cb = 25 v, i e = 0 - - 50 i cbo collector cutoff current v cb = 25 v, i e = 0 , t a = 150 c a i ebo - - na 100 emitter cutoff current v eb = 4 v, i c = 0 160 250 350 250 400 630 - 100 160 250 h fe h fe -grp. 16 h fe -grp. 25 h fe -grp. 40 dc current gain 1) i c = 100 ma, v ce = 1 v 60 100 170 - - - dc current gain 1) i c = 300 ma, v ce = 1 v h fe -grp. 16 h fe -grp. 25 h fe -grp. 40 - - - h fe collector-emitter saturation voltage1) i c = 500 ma, i b = 50 ma v cesat - - 0.7 v base-emitter saturation voltage 1) i c = 500 ma, i b = 50 ma v besat - - 1.2 v 1) pulse test: t 300 s, d = 2%
bc 807w, bc 808w oct-21-1999 3 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. ac characteristics transition frequency i c = 50 ma, v ce = 5 v, f = 100 mhz f t - 200 - mhz collector-base capacitance v cb = 10 v, f = 1 mhz c cb - 10 - pf emitter-base capacitance v eb = 0.5 v, f = 1 mhz c eb - 60 -
bc 807w, bc 808w oct-21-1999 4 permissible pulse load r thjs = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 total power dissipation p tot = f ( t a *; t s ) * package mounted on epoxy 0 20 40 60 80 100 120 c 150 t a ,t s 0 50 100 150 200 mw 300 p tot t s 0 20 40 60 80 100 120 c 150 t a ,t s 0 50 100 150 200 mw 300 p tot t a 0 20 40 60 80 100 120 c 150 t a ,t s 0 50 100 150 200 mw 300 p tot permissible pulse load p totmax / p totdc = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 collector cutoff current i cbo = f ( t a ) v cb = 25v 0 10 ehp00213 a t 150 0 5 10 cbo na 50 100 1 10 2 10 4 10 ?c typ max 10 3
bc 807w, bc 808w oct-21-1999 5 dc current gain h fe = f ( i c ) v ce = 1v 10 ehp00216 -1 3 10 ma 0 10 3 10 5 5 10 0 10 1 10 1 c fe h 2 10 2 10 ? c 100 5 25 ? c -50 ? c transition frequency f t = f ( i c ) v ce = 5v 10 ehp00210 03 10 ma 1 10 3 10 5 5 10 1 10 2 10 2 c t f mhz collector-emitter saturation voltage i c = f ( v cesat ), h fe = 10 0 10 ehp00215 cesat v 0.4 v 0.8 -1 10 0 10 1 3 10 5 5 c ma 5 2 10 0.2 0.6 -50 25 150 ? c ? c ? c base-emitter saturation voltage i c = f ( v besat ), h fe = 10 0 10 ehp00214 besat v 2.0 v 4.0 -1 10 0 10 1 3 10 5 5 c ma 5 2 10 1.0 3.0 ? c -50 25 ? c ? c 150
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